Heterostructure Barrier Mixers for Terahertz Applications
نویسندگان
چکیده
This paper deals with Schottky and Heterostructure Barrier devices fabricated for planar integration in a 560 GHz Subharmonic Mixer (SHM). Taking advantage of an InP-based technology, two barrier types, metal/InGaAs and metal/InAlAs/InGaAs respectively, have been investigated. The design was carried out by means of self-consistent quantum calculations and the fabrication involved submicron Tshaped contacts and air-bridge technology for back-to-back integrated diode pairs. The trade-offs between the key figures of merit for SHM are discussed and compared to experimental results. In addition, various studies of the potential of a Planar Doped Heterostructure Barrier for single SHM devices are presented. Indexing terms : Heterostructure devices, Subharmonic Mixer, InP technology, Terahertz, Space applications
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